STPS10L40CT datasheet(3/6 Pages) STMICROELECTRONICS

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1E-3

1E-2

1E-1

1E+0

100

IM(A)

Tc=25

°C

Tc=125

°C

Tc=75

°C

t(s)

δ=0.5

Fig. 3-1:

Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode) (TO-220AB and D

2PAK).

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

Fig. 4-1: Relative variation of thermal impedance

junction to case versus pulse duration.

(TO-220AB and D

2PAK).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

IR(mA)

Tj=100

°C

Tj=25

°C

Tj=150

°C

VR(V)

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

1E-3

1E-2

1E-1

1E+0

IM(A)

Tc=25

°C

Tc=125

°C

Tc=75

°C

δ=0.5

t(s)

Fig. 3-2:

Non repetitive surge peak forward

current versus

overload duration (maximum

values, per diode) (ISOWATT220AB).

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

Fig. 4-2: Relative variation of thermal impedance

junction to case versus pulse duration.

(ISOWATT220AB).

100

1000

VR(V)

C(pF)

F=1MHz

Tj=25

°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

STPS10L40CT/CG/CF

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