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LED7707 数据表(PDF) 29 Page - STMicroelectronics |
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LED7707 数据表(HTML) 29 Page - STMicroelectronics |
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29 / 48 page ![]() LED7707 Application information 29/48 6.2 Thermal considerations In order to prevent the device from exceeding the thermal shutdown threshold (150 °C), it is important to estimate the junction temperature through the following equation: Equation 17 where TA is the ambient temperature, Rth,JA is the equivalent thermal resistance junction to ambient and PD,tot is the power dissipated by the device. The Rth,JA measured on the application demonstration board (described in Section 6.5) is 42 °C/W. The PD,tot has several contributions, listed below. a) Conduction losses due to the RDS(on) of the internal power switch, equal to: Equation 18 where D is defined as: Equation 19 and DDIM is the duty cycle of the PWM dimming signal. b) Switching losses due to the power MOSFET turn on and off, calculated as: Equation 20 where tr and tf are the power MOSFET rise time and fall time respectively. c) Current generators losses. This contribution is strictly related to the LEDs used in the application. Only the contribution of the leading current generator (“master” current generator) can be predicted, regardless of the LEDs forward voltage: Equation 21 where IROW is the current flowing through the row, whereas VIFB is the voltage across the master current generator (typically 700 mV). The voltages across the other current generators depend on the spread of the LEDs forward voltage. The worst case for power dissipation (maximum forward voltage LEDs in the master row, minimum forward voltage LEDs in all other rows) can be estimated as: tot , D JA , th Amb J P R T T ⋅ + = DIM 2 IN DSon cond , D D D I R P ⋅ ⋅ ⋅ = OUT IN V V 1 D − = DIM f r sw IN OUT sw , D D 2 ) t t ( f I V P ⋅ + ⋅ ⋅ ⋅ = DIM IFB ROW Master , GEN D V I P ⋅ ⋅ = |
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