BUL310

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

s

NPN TRANSISTOR

s

HIGH VOLTAGE CAPABILITY

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

s

FULLY CHARACTERISED AT 125

s

LARGE RBSOA

APPLICATIONS

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

s

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The device is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and high voltage capability. It

uses a Cellular Emitter structure with planar edge

termination to enhance switching speeds while

maintaining a wide RBSOA.

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

INTERNAL SCHEMATIC DIAGRAM

February 2002

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

1000

V

500

V

9

V

Collector Current

5

V

10

A

Base Current

3

A

4

A

Total Dissipation at Tc = 25

W

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

TO-220

®

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