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BUL310 数据表(PDF) 2 Page - STMicroelectronics

部件名 BUL310
功能描述  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUL310 数据表(HTML) 2 Page - STMicroelectronics

  BUL310 Datasheet HTML 1Page - STMicroelectronics BUL310 Datasheet HTML 2Page - STMicroelectronics BUL310 Datasheet HTML 3Page - STMicroelectronics BUL310 Datasheet HTML 4Page - STMicroelectronics BUL310 Datasheet HTML 5Page - STMicroelectronics BUL310 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.65
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1000 V
VCE = 1000 V
Tj = 125
oC
100
500
µA
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 500 V
250
µA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L= 25 mH
500
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
IC = 3 A
IB = 0.6 A
0.5
0.7
1.1
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
IC = 2 A
IB = 0.4 A
IC = 3 A
IB = 0.6 A
1
1.1
1.2
V
V
V
hFE
∗
DC Current Gain
IC = 10 mA
VCE = 5 V
IC = 3 A
VCE = 2.5 V
10
610
14
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
IB1 = 0.4 A
VBE(off) = -5 V
RBB = 0
Ω
VCL = 250 V
L = 200
µH
(see figure 1)
1.2
80
1.9
160
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
IB1 = 0.4 A
VBE(off) = -5V
RBB = 0
Ω
VCL = 250 V
L = 200
µH
Tj = 125
oC
(see figure 1)
1.8
150
µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL310
2/6



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