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IRF630M 数据表(PDF) 1 Page - STMicroelectronics |
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IRF630M 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() June 2006 Rev 2 1/14 14 IRF630M IRF630MFP N-channel 200V - 0.35 Ω - 9A - TO-220 /TO-220FP Mesh Overlay™ Power MOSFET General features ■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Gate charge minimized Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO- 220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s. Applications ■ Switching application Internal schematic diagram Type VDSS (@Tjmax) RDS(on) ID IRF630M 200 V < 0.40 Ω 9 A IRF630MFP 200 V < 0.40 Ω 9 A 1 2 3 1 2 3 TO-220 TO-220FP www.st.com Order codes Part number Marking Package Packaging IRF630M IRF630M TO-220 Tube IRF630MFP IRF630MFP TO-220FP Tube |
类似零件编号 - IRF630M |
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类似说明 - IRF630M |
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