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IRF630M 数据表(PDF) 3 Page - STMicroelectronics |
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IRF630M 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() IRF630M - IRF630MFP Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit IRF630M IRF630MFP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate voltage (RGS = 20 kW) 200 V VGS Gate- source voltage ± 20 V ID Drain current (continuos) at TC = 25°C 9 9 (1) 1. Limited only by maximum temperature allowed A ID Drain current (continuos) at TC = 100°C 5.7 5.7 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 36 36 A PTOT Total dissipation at TC = 25°C 75 30 W Derating factor 0.6 0.24 W/°C dv/dt (3) 3. ISD ≤9A, di/dt £300A/µs, VDD £ V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 5 5 V/ns VISO Insulation winthstand voltage (DC) -- 2500 V Tstg Storage temperature –65 to 150 °C Tj Max. operating junction temperature 150 °C Table 2. Thermal data TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 1.67 4.17 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 5A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 350 mJ |
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