October 2007

Rev 8

1/12

12

ST13005

High voltage fast-switching

NPN power transistor

Features

Applications

Description

The device is manufactured using high voltage

multi-epitaxial

planar

technology

for

high

switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

Figure 1.

Internal schematic diagram

TO-220

1

2

3

Table 1.

Device summary

Order code

Package

Packaging

ST13005

13005A

TO-220

Tube

ST13005

13005B

TO-220

Tube

1.

Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either

groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

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