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ST13005 数据表(PDF) 4 Page - STMicroelectronics

部件名 ST13005
功能描述  High voltage fast-switching NPN power transistor
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST13005 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
ST13005
4/12
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE =700 V
VCE =700 V TC = 125°C
1
5
mA
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 9 V
1mA
VCEO(sus)
(1)
1.
Pulsed duration = 300 ms, duty cycle £1.5%
Collector-emitter
sustaining voltage
(IB = 0)
IC =10 mA
400
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 1 A
_
IB = 0.2 A
IC = 2 A _ _
IB = 0.5 A
IC = 4 A _ _
IB = 1 A
0.5
0.6
1
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 1 A
_
IB = 0.2 A
IC = 2 A _ _
IB = 0.5 A
1.2
1.6
V
V
hFE
(1)(2)
2.
Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to
ship either groups according to production availability. Please contact your nearest STMicroelectronics
sales office for delivery details.
DC current gain
IC = 1 A
_
VCE = 5 V
Group A
Group B
IC = 2 A
_ _
VCE = 5 V
15
27
8
32
45
40
ts
tf
Resistive load
Storage time
Fall time
IC = 2 A
VCC = 125 V
IB1 = - IB2 = 0.4 A
tp = 30 µs
1.5
0.2
3
µs
µs



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