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STW15NK50Z 数据表(PDF) 3 Page - STMicroelectronics |
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STW15NK50Z 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 19 page ![]() STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z Electrical ratings 3/19 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220/D2PAK I2PAK/TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 500 V VDGR Drain-gate voltage (RGS = 20KΩ) 500 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 14 14(1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC=100°C 8.8 8.8(1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 56 56(1) A PTOT Total dissipation at TC = 25°C 160 40 W Derating Factor 1.28 0.32 W/°C IGS Gate-source current (DC) ± 20 mA Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k Ω) 4000 KV dv/dt(3) 3. ISD ≤14A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 4.5 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) -- 2500 V TJ Tstg Operating junction temperature Storage temperature -50 to 150°C °C Table 2. Thermal data Symbol Parameter Value Unit TO-220 I2PAK D2PAK TO-220FP TO-247 Rthj-case Thermal resistance junction-case Max 0.78 3.1 0.78 °C/W Rthj-pcb(1) Thermal resistance junction-pcb max 60 °C/W |
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