STW15NK50Z datasheet(5/19 Pages) STMICROELECTRONICS

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STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z Electrical charac-

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Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

500

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100µA

33.75

4.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 7A

0.30

0.34

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID = 7A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

2260

264

Coss eq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 400V

150

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400V, ID = 14A

VGS =10V

106

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=250 V, ID=7A,

RG=4.7Ω, VGS=10V

(see Figure 18)

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