1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

T

tp

Fig. 4.1: Relative variation of thermal transient

impedance junction to case versus pulse duration

(TO-220AB / DPAK).

1E-3

1E-2

1E-1

1E+0

0

5

10

15

20

25

30

35

40

t(s)

IM(A)

Tc=75

°C

Tc=130

°C

Tc=100

°C

t

δ=0.5

Fig. 3-2: Non repetitive surge peak forward current

versus overload duration.

(Maximum values, per diode) (ISOWATT220AB).

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

T

tp

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 4-2: Relative variation of thermal transient

impedance junction to case versus pulse duration

(ISOWATT220AB).

0

5

10

15

20

25

30

35

40

1E-5

1E-4

1E-3

1E-2

VR(V)

IR(A)

Tj=150

°C

Tj=75

°C

Tj=100

°C

Tj=125

°C

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

1E-3

1E-2

1E-1

1E+0

0

5

10

15

20

25

30

35

40

45

t(s)

IM(A)

Tc=75

°C

Tc=135

°C

Tc=100

°C

t

δ=0.5

Fig. 3-1: Non repetitive surge peak forward current

versus overload duration.

(Maximum values, per diode) (TO-220AB/ DPAK).

12

5

10

20

50

10

100

500

VR(V)

C(pF)

F=1MHz

Tj=25

°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

STPS640CT/CF/CB

3/6