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STS2DNFS30L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STS2DNFS30L
功能描述  N-CHANNEL 30V - 0.09ohm - 3A SO-8 STripFET??II MOSFET PLUS SCHOTTKY RECTIFIER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS2DNFS30L 数据表(HTML) 2 Page - STMicroelectronics

  STS2DNFS30L Datasheet HTML 1Page - STMicroelectronics STS2DNFS30L Datasheet HTML 2Page - STMicroelectronics STS2DNFS30L Datasheet HTML 3Page - STMicroelectronics STS2DNFS30L Datasheet HTML 4Page - STMicroelectronics STS2DNFS30L Datasheet HTML 5Page - STMicroelectronics STS2DNFS30L Datasheet HTML 6Page - STMicroelectronics  
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STS2DNFS30L
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THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-amb
(*)Thermal Resistance Junction-ambient MOSFET
62.5
°C/W
Rthj-amb
(*)Thermal Resistance Junction-ambient SCHOTTKY Maximum
100
°C/W
Tstg
Storage Temperature Range
-55 to 150
°C
Tl
Junction Temperature
150
°C
(*) Mounted on FR-4 board (Steady State)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
1V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.5 A
0.09
0.11
Ω
VGS = 4.5V, ID = 1.5 A
0.13
0.15
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V , ID = 1.5 A
2.5
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
121
pF
Coss
Output Capacitance
45
pF
Crss
Reverse Transfer
Capacitance
11
pF



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