STS2DNFS30L datasheet(3/6 Pages) STMICROELECTRONICS

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STS2DNFS30L

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 15 V, ID = 1.5 A

RG = 4.7 Ω VGS = 4.5 V

(see test circuit, Figure 3)

Rise Time

Total Gate Charge

VDD = 24 V, ID = 3 A,

VGS = 4.5 V

4.5

Qgs

Gate-Source Charge

1.7

Qgd

Gate-Drain Charge

0.9

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay Time

Fall Time

VDD = 15 V, ID = 1.5 A,

RG =4.7Ω, VGS = 4.5 V

(see test circuit, Figure 3)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 3 A, VGS = 0

1.2

trr

Reverse Recovery Time

ISD = 3 A, di/dt = 100A/µs,

VDD = 30 V, Tj = 150°C

(see test circuit, Figure 5)

Qrr

Reverse Recovery Charge

8.1

IRRM

Reverse Recovery Current

0.85

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IR(*)

Reversed Leakage Current

TJ = 25 °C , VR = 30 V

TJ = 125 °C , VR = 30 V

1.5

µA

VF(*)

Forward Voltage Drop

TJ = 25 °C , IF = 1 A

TJ = 125 °C , IF = 1 A

0.37

0.55

0.46

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