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STS2DPF20V 数据表(PDF) 2 Page - STMicroelectronics

部件名 STS2DPF20V
功能描述  DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS2DPF20V 数据表(HTML) 2 Page - STMicroelectronics

  STS2DPF20V Datasheet HTML 1Page - STMicroelectronics STS2DPF20V Datasheet HTML 2Page - STMicroelectronics STS2DPF20V Datasheet HTML 3Page - STMicroelectronics STS2DPF20V Datasheet HTML 4Page - STMicroelectronics STS2DPF20V Datasheet HTML 5Page - STMicroelectronics STS2DPF20V Datasheet HTML 6Page - STMicroelectronics  
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STS2DPF20V
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THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-amb
(*)Thermal Resistance Junction-ambient Single Operation
Dual Operation
62.5
78
°C/W
°C/W
Tstg
Storage Temperature
-55 to 150
°C
Tj
Junction-ambient Temperature
-55 to 150
°C
(*) When Mounted on 0.5 in² of 2 oz. Copper
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 12 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
0.6
V
RDS(on)
Static Drain-source On
Resistance
VGS = 4.5 V, ID = 1 A
0.14
0.20
Ω
VGS = 2.7 V, ID = 1 A
0.20
0.25
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 1.5 A
4.5
S
Ciss
Input Capacitance
VDS = 15V, f = 1 MHz, VGS = 0
315
pF
Coss
Output Capacitance
87
pF
Crss
Reverse Transfer
Capacitance
17
pF



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