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STS2DPF20V 数据表(PDF) 3 Page - STMicroelectronics

部件名 STS2DPF20V
功能描述  DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS2DPF20V 数据表(HTML) 3 Page - STMicroelectronics

  STS2DPF20V Datasheet HTML 1Page - STMicroelectronics STS2DPF20V Datasheet HTML 2Page - STMicroelectronics STS2DPF20V Datasheet HTML 3Page - STMicroelectronics STS2DPF20V Datasheet HTML 4Page - STMicroelectronics STS2DPF20V Datasheet HTML 5Page - STMicroelectronics STS2DPF20V Datasheet HTML 6Page - STMicroelectronics  
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STS2DPF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 10 V, ID = 1.5A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 1)
38
ns
tr
Rise Time
30
ns
Qg
Total Gate Charge
VDD = 10V, ID = 2 A,
VGS = 4.5 V
(see test circuit, Figure 2)
3.8
4.8
nC
Qgs
Gate-Source Charge
0.34
nC
Qgd
Gate-Drain Charge
0.8
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 10 V, ID = 1 A,
RG =4.7Ω, VGS = 4.5 V
(see test circuit, Figure 1)
45
11
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
2
A
ISDM (2)
Source-drain Current (pulsed)
8
A
VSD (1)
Forward On Voltage
ISD = 2 A, VGS = 0
1.2
V
trr
Reverse Recovery Time
ISD = 2 A, di/dt = 100A/µs,
VDD = 10 V, Tj = 150°C
(see test circuit, Figure 3)
15
ns
Qrr
Reverse Recovery Charge
7.5
nC
IRRM
Reverse Recovery Current
1
A



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