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STS4DNF60 数据表(PDF) 1 Page - STMicroelectronics |
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STS4DNF60 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() STS4DNF60L N - CHANNEL 60V - 0.045 Ω - 4A SO-8 STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.045 Ω s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique " Single Feature Size ™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGMENT IN PORTABLE/DESKTOP PCs ® INTERNAL SCHEMATIC DIAGRAM December 1998 SO-8 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC Single Operation Drain Current (continuous) at Tc = 100 oC Single Operation 4 2.5 A A IDM( •) Drain Current (pulsed) 16 A Ptot Total Dissipation at Tc = 25 oC Dual Operation Total Dissipation at Tc = 25 oC Single Operation 2 1.6 W W ( •) Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STS4DNF60L 60 V < 0.055 Ω 4 A 1/5 |
类似零件编号 - STS4DNF60 |
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类似说明 - STS4DNF60 |
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