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STS4DNF60 数据表(PDF) 2 Page - STMicroelectronics

部件名 STS4DNF60
功能描述  N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS4DNF60 数据表(HTML) 2 Page - STMicroelectronics

  STS4DNF60 Datasheet HTML 1Page - STMicroelectronics STS4DNF60 Datasheet HTML 2Page - STMicroelectronics STS4DNF60 Datasheet HTML 3Page - STMicroelectronics STS4DNF60 Datasheet HTML 4Page - STMicroelectronics STS4DNF60 Datasheet HTML 5Page - STMicroelectronics  
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THERMAL DATA
Rthj-amb
Tj
Tstg
*Thermal Resistance Junction-ambient
Single Operation
Dual Operation
Maximum Operating Junction Temperature
Storage Temperature
78
62.5
150
-55 to 150
oC/W
oC/W
oC
oC
(*) Mounted on FR-4 board (t
≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating
Tc = 125
oC
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS ID = 250
µA
1
1.7
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 2 A
VGS = 4.5 V
ID = 2 A
0.045
0.05
0.055
0.065
Ω
Ω
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max
VGS = 10 V
20
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 2 A
7
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0 V
1250
130
26
pF
pF
pF
STS4DNF60L
2/5



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