STT1NF100 datasheet(1/6 Pages) STMICROELECTRONICS

部件名	STT1NF100

功能描述	N-CHANNEL 100V - 0.7ohm - 1A SOT23-6L STripFET??II POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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PRELIMINARY DATA

September 2002

STT1NF100

N-CHANNEL 100V - 0.7

Ω -1A SOT23-6L

STripFET™ II POWER MOSFET

(1) ISD ≤1A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

s

TYPICAL RDS(on) =0.7Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

VERY LOW Qg

DESCRIPTION

This Power MOSFET is the latest development of ST-

Microelectronics unique “Single Feature Size

™” strip-

based process. The resulting transistor shows ex-

tremely high packing density for low on-resistance,

rugged avalance characteristics and less critical align-

ment steps therefore a remarkable manufacturing re-

producibility.

APPLICATIONS

s

DC-DC & DC-AC CONVERTERS

s

DC MOTOR CONTROL (DISK DRIVES, etc.)

s

SYNCHRONOUS RECTIFICATION

MARKING

s

STQ0

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STT1NF100

100V

<0.8

Ω

1A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

100

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

1A

ID

Drain Current (continuous) at TC = 100°C

0.6

A

IDM ( )

Drain Current (pulsed)

4

A

PTOT

Total Dissipation at TC = 25°C

1.6

W

Derating Factor

0.013

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

20

V/ns

Tstg

Storage Temperature

–55 to150

°C

Tj

Max. Operating Junction Temperature

SOT23-6L

INTERNAL SCHEMATIC DIAGRAM

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