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STT1NF100 数据表(PDF) 3 Page - STMicroelectronics

部件名 STT1NF100
功能描述  N-CHANNEL 100V - 0.7ohm - 1A SOT23-6L STripFET??II POWER MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STT1NF100 数据表(HTML) 3 Page - STMicroelectronics

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STT1NF100
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =50V, ID = 0.5A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 1)
4ns
tr
Rise Time
5.5
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =50V, ID =1A,
VGS =10V
(see test circuit, Figure 2)
4
1
1.5
6
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 50V, ID = 0.5A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 1)
13
6.5
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
1
A
ISDM (2)
Source-drain Current (pulsed)
4
A
VSD (1)
Forward On Voltage
ISD = 1A, VGS =0
1.2
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1A, di/dt = 100A/µs,
VDD =20V, Tj = 150°C
(see test circuit, Figure 3)
45
60
2.7
ns
nC
A



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