STT4NF30L datasheet(1/5 Pages) STMICROELECTRONICS

部件名	STT4NF30L

功能描述	N - CHANNEL 30V - 0.055ohm - 4A - TSOP-6 STripFET MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STT4NF30L

N - CHANNEL 30V - 0.055

Ω - 4A - TSOP-6

STripFET

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.055

Ω

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process.The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

DC MOTOR DRIVE

s

DC-DC CONVERTERS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGEMENT IN

PORTABLE/DESKTOP PCs

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC4

A

ID

Drain Current (continuous) at Tc =100

oC2.5

A

IDM (

•)

Drain Current (pulsed)

16

A

Ptot

T otal Dissipat ion at Tc =25

oC2

W

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STT4NF 30L

30 V

< 0.065

Ω

4A

November 1998

TSOP-6

1/5

类似零件编号 - STT4NF30L

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SamHop Microelectronics...	STT432S	196Kb / 7P	Super high dense cell design for low RDS(ON).
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SamHop Microelectronics...	STT468A	132Kb / 8P	Super high dense cell design for low RDS(ON).
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