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STT4NF30L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STT4NF30L
功能描述  N - CHANNEL 30V - 0.055ohm - 4A - TSOP-6 STripFET MOSFET
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STT4NF30L 数据表(HTML) 2 Page - STMicroelectronics

  STT4NF30L Datasheet HTML 1Page - STMicroelectronics STT4NF30L Datasheet HTML 2Page - STMicroelectronics STT4NF30L Datasheet HTML 3Page - STMicroelectronics STT4NF30L Datasheet HTML 4Page - STMicroelectronics STT4NF30L Datasheet HTML 5Page - STMicroelectronics  
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THERMAL DATA
Rthj-amb
TJ
Tstg
(*)Thermal Resist ance Junction-ambient
Max
Maximum O perat ing Junction Temperature
Storage T emperature
62.5
150
-55 to 150
oC/W
oC
oC
(*) Mounted on FR-4 board (t
≤ 5 sec)
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
30
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc = 125
oC
1
10
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA1
1.7
2. 5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V
ID =2 A
VGS =4.5V ID =2 A
0.055
0.06
0.065
0.09
Ω
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
4A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =6 A
6
S
Ciss
Coss
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
420
62
20
550
80
30
pF
pF
pF
STT4NF30L
2/5



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