STTH1506TPI datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

STTH1506TPI

2/5

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR*

Reverse leakage cur-

rent

VR =VRRM

Tj = 25°C

µA

Tj = 125°C

200

VF**

Forward voltage drop

IF = 15A

Tj=25

°C

3.6

Tj = 125°C

2.1

2.6

Pulse test: * tp = 5ms,

δ <2%

** tp = 380µs,

δ <2%

To evaluate the maximum conduction losses use the following equation:

P=1.8xIF(AV) + 0.053 x IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (for both diodes)

Symbol

Parameter

Test conditions

Value

Unit

Rth (j-c)

Junction to case

Per diode

2.9

°C/W

Rth (c)

Coupling

0.3

Rth (j-c)

Junction to case

Total

1.6

Conduction power dissipation for

both diodes

IF(AV) =15A

δ = 0.5

Tc = 70°C

THERMAL AND POWER DATA

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery

time

IF = 0.5 A Irr = 0.25A

IR =1A

Tj = 25°C

IF =1A dIF/dt = - 50A/

µs

VR =30V

IRM

Reverse recovery

current

VR = 400 V IF =15A

dIF/dt = -200 A/

µs

Tj = 125°C

4.8

6.0

Sfactor

0.4

RECOVERY CHARACTERISTICS

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

tfr

Forward

recovery time

IF =15A dIF/dt = 100A/

µs,

VFR =1.1xVFmax

Tj = 25°C

200

VFP

Forward

recovery voltage

IF =15A dIF/dt = 100 A/

µs

Tj = 25°C

TURN-ON SWITCHING CHARACTERISTICS

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