STTH1506TPI datasheet(4/5 Pages) STMICROELECTRONICS

4 / 5 page

STTH1506TPI

4/5

0.20

0.30

0.40

0.50

0.60

0.70

0.80

200

400

600

800

1000

dIF/dt(A/µs)

S factor

I=I

V =400V

T =125°C

F(AV)

Fig. 7: Softness factor versus dIF/dt (typical

values).

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

100

125

Tj(°C)

IRM

S factor

I=I

V =400V

Reference: T =125°C

F(AV)

Fig. 8: Relative variations of dynamic parameters

versus junction temperature.

100

150

200

250

300

350

400

450

500

VFP(V)

dIF/dt(A/µs)

I=I

T =125°C

F(AV)

Fig. 9: Transient peak forward voltage versus

dIF/dt (90% confidence).

100

150

200

250

300

350

400

100

200

300

400

500

tfr(ns)

dIF/dt(A/µs)

I=I

V =1.1 x V max.

T =125°C

F(AV)

Fig. 10: Forward recovery time versus dIF/dt (90%

confidence).

100

1000

100

1000

VR(V)

C(pF)

F=1MHz

=30mV

T =25°C

OSC

Fig. 11: Junction capacitance versus reverse

voltage applied (typical values).

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