1/5

STTH302

®

November 2001 - Ed: 1A

HIGH EFFICIENCY ULTRAFAST DIODE

DO-201AD

STTH302

s

Very low conduction losses

s

Negligible switching losses

s

Low forward and reverse recovery times

s

High junction temperature

FEATURES AND BENEFITS

The STTH302 which is using ST's new 200V

planar technology, is specially suited for switching

mode base drive & transistor circuits.

The device is also intended for use as a free

wheeling diode in power supplies and other power

switching applications.

DESCRIPTION

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

200

V

Average forward current

TI = 107°C

δ = 0.5

3A

Surge non repetitive forward current

Sinusoidal

130

A

Storage temperature range

-65to+175

°C

Tj

Maximum operating junction temperature

175

°C

ABSOLUTE RATINGS (limiting values)

3A

200 V

Tj (max)

175 °C

0.75 V

trr (max)

35 ns

MAIN PRODUCT CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction-ambient*

25

°C/W

* On infinite heatsink with 10mm lead length.

THERMAL PARAMETERS