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HAF2017 数据表(PDF) 2 Page - Renesas Technology Corp |
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HAF2017 数据表(HTML) 2 Page - Renesas Technology Corp |
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2 / 9 page ![]() HAF2017(L), HAF2017(S) Rev.2.00, Apr.13.2004, page 2 of 8 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 16 V Gate to source voltage VGSS –2.5 V Drain current ID 20 A Drain peak current ID (pulse) Note1 40 A Body-drain diode reverse drain current IDR 20 A Channel dissipation Pch Note2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. Value at Tch = 25 °C Typical Operation Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Input voltage VIH 3.5 ——V Input voltage VIL —— 1.2 V Input current (Gate non shut down) IIH1 — — 100 µA Vi = 8V, VDS =0 Input current (Gate non shut down) IIH2 — — 50 µA Vi = 3.5V, VDS =0 Input current (Gate non shut down) IIL — — 1 µA Vi = 1.2V, VDS =0 Input current (Gate shut down) IIH(sd)1 — 0.8 — mA Vi = 8V, VDS =0 Input current (Gate shut down) IIH(sd)2 — 0.35 — mA Vi = 3.5V, VDS =0 Shutdown temperature Tsd — 175 — °C Channel temperature Gate operation voltage VOP 3.5 — 12 V |
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