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HAF2017 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 HAF2017
功能描述  Silicon N Channel Power MOSFET Power Switching
PDF  9 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HAF2017 数据表(HTML) 3 Page - Renesas Technology Corp

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HAF2017(L), HAF2017(S)
Rev.2.00, Apr.13.2004, page 3 of 8
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Darin current
ID1
1
——A
VGS = 3.5 V, VDS = 2 V
Darin current
ID2
——
10
mA
VGS = 1.2 V, VDS = 2 V
Drain to source breakdown voltage
V(BR)DSS
60
——V
ID = 10 mA, VGS =0
Gate to source breakdown
V(BR)GSS
16
——V
IG = 800 µA, VDS =0
voltage
V(BR)GSS
–2.5
V
IG = –100 µA, VDS =0
Gate to source leak current
IGSS1
100
µA
VGS = 8 V, VDS =0
IGSS2
50
µA
VGS = 3.5 V, VDS =0
IGSS3
——
1
µA
VGS = 1.2 V, VDS =0
IGSS4
–100
µA
VGS = –2.4 V, VDS =0
Input current (shut down)
IGS(OP)1
—0.8
mA
VGS = 8 V, VDS =0
IGS(OP)2
—0.35
mA
VGS = 3.5 V, VDS =0
Zero gate voltage drain current
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.4
2.6
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|6
21
S
ID =10 A, VDS =10 V
Note3
Static drain to source on state
RDS(on)
3553m
ID = 10 A, VGS = 4.5 V
Note3
resistance
RDS(on)
2743m
ID = 10 A, VGS = 10 V
Note3
Output capacitance
Coss
460
pF
VDS = 10 V, VGS =0, f = 1 MHz
Turn-on delay time
td(on)
8.7
µs
VGS = 5 V, ID= 10 A, RL = 3
Rise time
tr
44.6
µs
Turn-off delay time
td(off)
2
µs
Fall time
tf
2.6
µs
Body-drain diode forward voltage
VDF
—0.9
V
IF = 20A, VGS = 0
Body-drain diode reverse recovery
time
trr
120
ns
IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
Over load shut down operation
tos1
—0.97
ms
VGS = 5 V, VDD = 16 V
time
Note4
tos2
—0.57
ms
VGS = 5 V, VDD = 24 V
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load condition.



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