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HAF2017 数据表(PDF) 3 Page - Renesas Technology Corp |
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HAF2017 数据表(HTML) 3 Page - Renesas Technology Corp |
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3 / 9 page ![]() HAF2017(L), HAF2017(S) Rev.2.00, Apr.13.2004, page 3 of 8 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test conditions Darin current ID1 1 ——A VGS = 3.5 V, VDS = 2 V Darin current ID2 —— 10 mA VGS = 1.2 V, VDS = 2 V Drain to source breakdown voltage V(BR)DSS 60 ——V ID = 10 mA, VGS =0 Gate to source breakdown V(BR)GSS 16 ——V IG = 800 µA, VDS =0 voltage V(BR)GSS –2.5 — — V IG = –100 µA, VDS =0 Gate to source leak current IGSS1 — — 100 µA VGS = 8 V, VDS =0 IGSS2 — — 50 µA VGS = 3.5 V, VDS =0 IGSS3 —— 1 µA VGS = 1.2 V, VDS =0 IGSS4 — — –100 µA VGS = –2.4 V, VDS =0 Input current (shut down) IGS(OP)1 —0.8 — mA VGS = 8 V, VDS =0 IGS(OP)2 —0.35 — mA VGS = 3.5 V, VDS =0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.4 — 2.6 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs|6 21 — S ID =10 A, VDS =10 V Note3 Static drain to source on state RDS(on) — 3553m Ω ID = 10 A, VGS = 4.5 V Note3 resistance RDS(on) — 2743m Ω ID = 10 A, VGS = 10 V Note3 Output capacitance Coss — 460 ― pF VDS = 10 V, VGS =0, f = 1 MHz Turn-on delay time td(on) — 8.7 ― µs VGS = 5 V, ID= 10 A, RL = 3 Ω Rise time tr — 44.6 — µs Turn-off delay time td(off) — 2 ― µs Fall time tf — 2.6 — µs Body-drain diode forward voltage VDF —0.9 — V IF = 20A, VGS = 0 Body-drain diode reverse recovery time trr — 120 — ns IF = 20 A, VGS = 0, diF/dt = 50 A/µs Over load shut down operation tos1 —0.97 — ms VGS = 5 V, VDD = 16 V time Note4 tos2 —0.57 — ms VGS = 5 V, VDD = 24 V Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. |
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