STTH5L06B datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

STTH5L06D/B/FP

3/7

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-c)

t (s)

Fig. 3-1: Relative variation of thermal impedance

junction to case versus pulse duration (TO-220AC,

DPAK).

100

200

300

400

500

600

700

800

900

1000

2030

405060

7080

100

t (ns)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

Fig. 5:

Reverse recovery time versus dIF/dt

(90% confidence).

20304050

607080

100

(A)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

I =0.25 x I

F(AV)

V =400V

T =125°C

Fig. 4: Peak reverse recovery current versus dIF/dt

(90% confidence).

100

150

200

250

300

350

400

450

500

1020

3040

5060

7080

100

Q (nC)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

dI /dt(A/µs)

Fig. 6: Reverse recovery charges versus dIF/dt

(90% confidence).

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

t (s)

Fig. 3-2: Relative variation of thermal impedance

junction

case

versus

pulse

duration

(TO-220FPAC).

102030405060708090

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

S factor

I=I

T =125°C

F(AV)

V =400V

dI /dt(A/µs)

Fig. 7: Softness factor versus dIF/dt (typical

values).

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