STTH5L06D/B/FP

4/7

0.00

0.25

0.50

0.75

1.00

1.25

25

50

75

100

125

S factor

T (°C)

j

I=I

Reference: T =125°C

F

F(AV)

j

V =400V

R

Fig.

8:

Relative

variations

of

dynamic

parameters versus junction temperature.

0

1

2

3

4

5

6

7

8

9

10

0

20

40

60

80

100

120

140

160

180

200

V

(V)

FP

dI /dt(A/µs)

F

I=I

T =125°C

F

F(AV)

j

Fig. 9: Transient peak forward voltage versus

0

20

40

60

80

100

120

140

160

180

200

0

20

40

60

80

100

120

140

160

180

200

t (ns)

fr

dI /dt(A/µs)

F

I=I

T =125°C

F

F(AV)

j

V

=1.1 x V max.

FR

F

Fig. 10:

(90% confidence).

1

10

100

1

10

100

1000

C(pF)

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

j

Fig. 11:

Junction capacitance versus reverse

voltage applied (typical values).

0

2

4

6

8

1012141618

20

0

10

20

30

40

50

60

70

80

S(Cu)(cm²)

R

(°C/W)

th(j-a)

Fig. 12:

Thermal resistance junction to ambient

versus copper surface under tab (epoxy printed circuit

board FR4, copper thickness: 35µm) (DPAK).