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HTT1127E 数据表(PDF) 4 Page - Renesas Technology Corp

部件名 HTT1127E
功能描述  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HTT1127E 数据表(HTML) 4 Page - Renesas Technology Corp

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HTT1127E
Rev.1.00 Aug 10, 2005 page 4 of 8
Q1 Main Characteristics
100
10
100
200
0
1
20
Collector Current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
25
50
VCE = 1 V
01
2
3
4
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
20
30
40
50
10
0
0.4
0.6
1.0
Typical Forward Transfer Characteristics
Base to Emitter Voltage VBE (V)
0.2
0.8
VCE = 1 V
10
20
30
40
50
IB = 50 µA
100
µA
150
µA
200
µA
250
µA
300
µA
350
µA
400
µA
450
µA
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.4
0.3
0.2
0.1
0
0.2
0.4
0.6
1.0
Emitter ground
f = 1 MHz
0.5
0.8
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
f = 1 GHz
VCE = 2 V
Collector Current IC (mA)
Noise Figure vs. Collector Current
6
4
3
2
1
0
1
2
5
10
20
50
100
5
VCE = 1 V
f = 900 MHz
VCE = 1 V
VCE = 2 V
VCE = 1 V



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