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HTT1127E 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 HTT1127E
功能描述  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HTT1127E 数据表(HTML) 3 Page - Renesas Technology Corp

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HTT1127E
Rev.1.00 Aug 10, 2005 page 3 of 8
Q1 Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
15
⎯
⎯
V
IC = 10
µA, IE = 0
Collector cutoff current
ICBO
⎯
⎯
0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO
⎯
⎯
1.0
µA
VCE = 4 V, RBE = infinite
Emitter cutoff current
IEBO
⎯
⎯
0.1
µA
VEB = 0.8 V, IC = 0
DC current transfer ratio
hFE
100
120
150
⎯
VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
⎯
0.3
0.45
pF
VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
fT
10
12
⎯
GHz
VCE = 1 V, IC = 5 mA,
f = 1 GHz
Forward transfer coefficient
|S21|
2
13
16
⎯
dB
Noise figure
NF
⎯
1.0
1.7
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ΓS = ΓL = 50 Ω
Q2 Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
15
⎯
⎯
V
IC = 10
µA, IE = 0
Collector cutoff current
ICBO
⎯
⎯
0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO
⎯
⎯
0.1
µA
VCE = 4 V, RBE = infinite
Emitter cutoff current
IEBO
⎯
⎯
0.1
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
90
120
140
⎯
VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
⎯
0.50
0.65
pF
VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
fT
2.0
4.0
⎯
GHz
VCE = 1 V, IC = 5 mA,
f = 1 GHz
Forward transfer coefficient
|S21|
2
7
11
⎯
dB
Noise figure
NF
⎯
1.7
2.3
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
ΓS = ΓL = 50 Ω



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