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12P10-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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12P10-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 7 page ![]() 12P10 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-262.a ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=-9.4A -4.0 V Maximum Body-Diode Continuous Current IS -9.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM -37.6 A Body Diode Reverse Recovery Time tRR 110 ns Body Diode Reverse Recovery Charge QRR VGS=0V, IS=-11.5A, dIF/dt=100A/s(Note 4) 0.47 nC Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature |
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