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12P10-TN3-R 数据表(PDF) 7 Page - Unisonic Technologies |
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12P10-TN3-R 数据表(HTML) 7 Page - Unisonic Technologies |
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7 / 7 page ![]() 12P10 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 6 www.unisonic.com.tw QW-R502-262.a TYPICAL CHARACTERISTICS 200 0 0 200 Drain Current vs. Source to Drain Voltage Source to Drain Voltage,VSD (mV) 800 1000 400 600 400 600 800 1200 VDS VGS 90% 10% Switching Time Waveforms td(on) tr tf td(off) 150 12 0 0 4 8 10 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) 2 100 50 6 200 4.5V 10V VGS=2.5V |
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