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T410 数据表(PDF) 2 Page - STMicroelectronics |
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T410 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() T4 Series 2/8 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) STATIC CHARACTERISTICS Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES S = Copper surface under tab Symbol Test Conditions Quadrant T4 Unit T405 T410 T435 IGT (1) VD = 12 V RL = 30 Ω I - II - III MAX. 5 10 35 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 33 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 100 mA MAX. 10 15 35 mA IL IG = 1.2 IGT I - III MAX. 10 25 50 mA II 15 30 60 dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C MIN. 20 40 400 V/µs (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 1.8 2.7 - A/ms (dV/dt)c = 10 V/µs Tj = 125°C 0.9 2.0 - Without snubber Tj = 125°C - - 2.5 Symbol Test Conditions Value Unit VTM (2) ITM = 5.5 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.9 V Rd (2) Dynamic resistance Tj = 125°C MAX. 120 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µA Tj = 125°C 1 mA Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) DPAK IPAK TO-220AB 2.6 °C/W ISOWATT220AB 4.0 Rth(j-a) Junction to ambient S = 0.5 cm² DPAK 70 °C/W TO-220AB ISOWATT220AB 60 IPAK 100 T |
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