T4 Series

4/8

Fig. 1: Maximum power dissipation versus RMS

on-state current (full cycle).

Fig. 2-1: RMS on-state current case versus tem-

perature (full cycle).

Fig. 2-2: RMS on-state current versus ambient

temperature (printed circuit FR4, copper thick-

ness: 35µm),full cycle.

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

Fig. 5: Surge peak on-state current versus

number of cycles.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

1

2

3

4

5

6

P(W)

IT(RMS)(A)

0

25

50

75

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Tc(°C)

IT(RMS)(A)

TO-220AB/DPAK/IPAK

ISOWATT220AB

0

25

50

75

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Tamb(°C)

IT(RMS)(A)

DPAK

(S=0.5cm²)

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

1E-2

1E-1

1E+0

K=[Zth/Rth]

Rth(j-c)

Rth(j-a)

TO-220AB/DPAK/IPAK

ISOWATT220AB

DPAK/IPAK

TO-220AB/ISOWATT220AB

tp(s)

-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]

IGT

IH & IL

Tj(°C)

1

10

100

1000

0

5

10

15

20

25

30

35

ITSM(A)

Non repetitive

Tj initial=25°C

Repetitive

Tc=110°C

One cycle

t=20ms

Number of cycles