MBRF2090CT datasheet(1/5 Pages) VISHAY

部件名	MBRF2090CT

功能描述	Dual Common-Cathode High-Voltage Schottky Rectifier

PDF	5 Pages

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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New Product

MBR(F,B)2090CT & MBR(F,B)20100CT

Vishay General Semiconductor

Document Number: 89033

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching

mode power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

10 A x 2

VRRM

90 V, 100 V

IFSM

150 A

VF

0.65 V

TJ max.

150 °C

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

MBR2090CT

MBR20100CT

MBRB2090CT

MBRB20100CT

PIN 1

PIN 2

K

HEATSINK

1

2

3

1

2

K

PIN 2

PIN 1

PIN 3

MBRF2090CT

MBRF20100CT

ITO-220AB

TMBS

®

TO-263AB

1

2

3

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR2090CT

MBR20100CT

UNIT

Maximum repetitive peak reverse voltage

VRRM

90

100

V

Working peak reverse voltage

VRWM

90

100

V

Maximum DC blocking voltage

VDC

90

100

V

Maximum average forward rectified current at TC = 133 °C

total device

per diode

IF(AV)

20

10

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

150

A

Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz

IRRM

0.5

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/µs

Operating junction and storage temperature range

TJ, TSTG

- 65 to + 150

°C

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 min

VAC

1500

V

类似零件编号 - MBRF2090CT

制造商	部件名	数据表	功能描述
Vishay Siliconix	MBRF2090CT	113Kb / 3P	Dual High-Voltage Schottky Rectifiers 02-Jul-02
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Galaxy Semi-Conductor H...	MBRF2090CT	157Kb / 2P	DUAL SCHOTTKY RECTIFIERS
Silicon Standard Corp.	MBRF2090CT	353Kb / 3P	Dual High-Voltage Schottky Barrier Rectifiers
Taiwan Semiconductor Co...	MBRF2090CT	183Kb / 2P	20.0 AMPS. Isolated Schottky Barrier Rectifiers

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