New Product

MBR(F,B)2090CT & MBR(F,B)20100CT

Vishay General Semiconductor

Document Number: 89033

Revision: 26-May-08

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PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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3

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

0

0.2

0.1

0.5

1.0

0.4

0.3

1

100

10

0.01

0.1

0.6

0.7

0.8

0.9

Instantaneous Forward Voltage (V)

T

T

T

Percent of Rated Peak Reverse Voltage (%)

20

10

100

40

60

80

1

10

0.01

0.1

100

0.001

30

50

70

90

T

T

T

1

10

100

1000

10 000

10

100

Reverse Voltage (V)

T

f = 1 MHz

V

Figure 6. Typical Transient Thermal Impedance Per Diode

Figure 7. Typical Transient Thermal Impedance Per Diode

0.01

10

1

100

10

100

0.1

0.1

1

t - Pulse Duration (s)

Junction to Case

MBR(B)

0.1

10

1

100

1

10

0.001

0.1

t - Pulse Duration (s)

Junction to Case

MBRF

0.01