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TN2540-600G 数据表(PDF) 3 Page - STMicroelectronics |
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TN2540-600G 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() 0 25 50 75 100 125 0 5 10 15 20 25 30 I (A) T(AV) D.C. α=180° Tcase(°C) Fig. 3: Average and D.C. on-state current versus case temperature. -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 I ,I [Tj]/I ,I [Tj=25°C] GT H GT H IGT IH Tj(°C) Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K=[Zth/Rth] Zth(j-c) Zth(j-a) tp(s) Fig. 4: Relative variation of thermal impedance versus pulse duration. 1 10 100 1000 0 40 80 120 160 200 240 280 320 I (A) TSM Tj initial=25°C F=50Hz Number of cycles Fig. 6: Non repetitive surge peak on-state current versus number of cycles. 0 5 10 15 20 25 0 5 10 15 20 25 P(W) α=180° α=120° α=90° α=60° α=30° D.C. I (A) T(AV) Fig. 1: Maximum average power dissipation ver- sus average on-state current . 0 20 40 60 80 100 120 140 0 5 10 15 20 25 P(W) Tcase (°C) 125 α=180° Rth=0°C/W Rth=1°C/W Rth=2°C/W Rth=3°C/W 100 105 110 115 120 Tamb(°C) Fig. 2 : Correlation between maximum average power dissipation and maximum allowable tem- peratures (Tamb and Tcase) for different thermal resistances heatsink+contact. TN2540-G 3/5 |
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