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TPP25011RL 数据表(PDF) 1 Page - STMicroelectronics |
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TPP25011RL 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() TPP25011 UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY IPP = 30A 10/1000 µs FEATURES SO8 Dedicated to sensitive telecom equipment protection, this device can provide both voltage and current triggered protection with a very tight tolerance. The breakdown voltage can be easily programmed by using an external zener diode. A multiple protection mode can be also performed when using several zener diodes, providing to each line interface an optimized protection level. The current limiting function is achieved with the use of a resistorbetween the gate and the cathode. The value of the resistor will determine the level of the desired current. DESCRIPTION SCHEMATIC DIAGRAM OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE February 1998 - Ed: 4 Application Specific Discretes A.S.D. ™ TM: ASD is trademarks of SGS-THOMSON Microelectronics. CCITT K17 : 10/700 µs 1.5 kV 5/310 µs38 A VDE 0433 : 10/700 µs2k V 5/310 µs 40 A (*) CNET : 0.5/700 µs 1.5 kV 0.2/310 µs38 A FCC part 68 : 2/10 µs 2.5 kV 2/10 µs 75 A (*) BELLCORE TR-NWT-000974 : 10/1000 µs1 kV 10/1000 µs 30 A (*) (*) with series resistors or PTC. COMPLIESWITH THE FOLLOWINGSTANDARDS : 1/7 |
类似零件编号 - TPP25011RL |
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类似说明 - TPP25011RL |
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