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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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TPP25011RL 数据表(PDF) 3 Page - STMicroelectronics |
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TPP25011RL 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page  Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current VGN Gate voltage IG Gate triggering current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) Note 1: See the reference test circuit 1. Note 2: See test circuit 2. Note 3: VR = 5V, F = 1MHz Type IRM @VRM VBR @IR VBO @IBO IH C max. min. max. min. note1 max. min. note 2 max. note 3 µA V V mA V mA mA mA pF TPP25011 6 60 250 1 340 15 200 180 100 1 - OPERATION WITHOUT GATE Type VGN @IGN =30 mA IG min. max. min. max. note 4 VA-C = 100 V V VmA mA TPP25011 1.05 1.35 5 40 2 - OPERATION WITH GATE TPP25011 3/7 |
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