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TS652 数据表(PDF) 3 Page - STMicroelectronics

部件名 TS652
功能描述  DIFFERENTIAL VARIABLE GAIN AMPLIFIER
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TS652 数据表(HTML) 3 Page - STMicroelectronics

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TS652
3/9
ELECTRICAL CHARACTERISTICS. V
CC = ±6Volts, Tamb =25°C (unless otherwise specified).
Symbol
Parameter
Test Conditio n
Min.
Typ.
Max
Unit
DC PERFORMANCE
Vi
Voltage on the Input Pin
0
V
ICC
Total Supply Current
No load, Vout =0
28
mA
Iccpdw
Power Down Total Consumption Power Down Mode
150
µA
∆V
OFFSET
Differential Input Offset Voltage
Vin =0, AV = 30dB
6mV
SVR
Supply Voltage Rejection Ratio
A
V = 0dB
50
80
dB
AC PERFORMANCE
Zin
Input Impedance
100k
Ω//5pF
Zout
Power Down Output Impedance Power Down Mode
100k
Ω
150k
Ω//5pF
V
OH
High Level Output Voltage
R
L connected to GND
R
L = 500Ω
4
4.5
V
V
OL
Low Level Output Voltage
R
L connected to GND
R
L = 500Ω
-4.5
-4
V
AV
Voltage Gain
F= 1MHz
-9
30
dB
Gain monotonicity guaranteed by design
PAV
Precision of the Voltage Gain
F= 1MHz
-1
1
dB
A
vstep
Step Value
F= 1MHz
2.4
3
3.6
dB
Avmin
Gain Mismatch between Both
Channels
F= 1MHz
1
dB
B
w
Bandwidth @ -3dB
RL = 500Ω
CL = 15pF
AV = -9dB
55
110
200
MHz
A
V = 0dB
32
69
132
AV = +18dB
26
52
100
AV = +30dB
10
18
36
Rbw
Bandwidth Roll-off
AV = +30dB, F = 1MHz
0.08
dB
Io
Bandwidth @ -3dB
RL = 500Ω,CL = 15pF
|Source|
17
28
mA
Sink
17
22
SR
Slew Rate (gain independent)
Vo = 2Vpeak
50
100
V/
µs
NOISE AND DISTORTION
in
Equivalent Input Noise Current
F = 100kHz
1.5
pA/
√Hz
en
Equivalent Input Noise Voltage
F = 100kHz
A
V = 30dB
4.6
nV/
√Hz
THD30
Harmonic Distorsion
1Vpeak, F = 150kHz,
A
V = +30dB, RL = 500Ω// 15pF
dBc
H2
-70
H3
-93
H4
-98
H5
-99
IM3
Third Order Intermodulation
Product
F1 = 180kHz, F2 = 280kHz
Vout = 1Vpeak, AV = +30dB
RL = 500Ω//15pF
dBc
@ 80kHz
-77
@ 380kHz
-85
@640kHz
-86
@740kHz
-87
IM3
Third Order Intermodulation
Product
F1 = 70kHz, F2 = 80kHz
Vout = 1Vpeak, AV = +30dB
RL = 500Ω//15pF
dBc
@ 60kHz
-77
@ 90kHz
-79
@220kHz
-83
@230kHz
-84



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