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LPC2103 数据表(PDF) 21 Page - NXP Semiconductors

部件名 LPC2103
功能描述  Single-chip 16-bit/32-bit microcontrollers; 8 kB/16 kB/32 kB flash with ISP/IAP, fast ports and 10-bit ADC
PDF  32 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

LPC2103 数据表(HTML) 21 Page - NXP Semiconductors

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LPC2101_02_03_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 7 October 2008
21 of 32
NXP Semiconductors
LPC2101/02/03
Single-chip 16-bit/32-bit microcontrollers
7.
Limiting values
[1]
The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless
otherwise noted.
[2]
Core and internal rail.
[3]
External rail.
[4]
On ADC related pins.
[5]
Including voltage on outputs in 3-state mode.
[6]
Only valid when the VDD(3V3) supply voltage is present.
[7]
Not to exceed 4.6 V.
[8]
Per supply pin.
[9]
The peak current is limited to 25 times the corresponding maximum current.
[10] Per ground pin.
[11] Dependent on package type.
[12] Performed per AEC-Q100-002.
[13] Performed per AEC-Q100-003.
[14] Performed per AEC-Q100-011.
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Symbol
Parameter
Conditions
Min
Max
Unit
VDD(1V8)
supply voltage (1.8 V)
[2]
−0.5
+2.5
V
VDD(3V3)
supply voltage (3.3 V)
[3]
−0.5
+3.6
V
VDDA
analog 3.3 V pad supply voltage
−0.5
+4.6
V
Vi(VBAT)
input voltage on pin VBAT
for the RTC
−0.5
+4.6
V
VIA
analog input voltage
[4]
−0.5
+5.1
V
VI
input voltage
5 V tolerant I/O
pins
[5][6]
−0.5
+6.0
V
other I/O pins
[5]
−0.5
VDD + 0.5[7] V
IDD
supply current
[8] -
100[9]
mA
ISS
ground current
[10] -
100[9]
mA
Tstg
storage temperature
[11]
−65
+150
°C
Ptot(pack)
total power dissipation (per package)
based on package
heat transfer, not
device power
consumption
-
1.5
W
Vesd
electrostatic discharge voltage
Human Body
Model (HBM)
−4000
+4000
V[12]
Machine Model
(MM)
−200
+200
V[13]
Charged Device
Model (CDM)
−800
+800
V[14]



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