MMBZXVCL_MMBZXVDL_SER_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 3 September 2008

8 of 15

NXP Semiconductors

MMBZxVCL; MMBZxVDL series

Double ESD protection diodes for transient overvoltage suppression

[1]

In accordance with IEC 61643-321 (10/1000

µs current waveform).

[2]

Measured from pin 1 or 2 to pin 3.

temperature coefficient

MMBZ12VDL

MMBZ12VDL/DG

-

8.1

-

mV/K

MMBZ15VDL

MMBZ15VDL/DG

-

11

-

mV/K

MMBZ18VCL

MMBZ18VCL/DG

-

14

-

mV/K

MMBZ20VCL

MMBZ20VCL/DG

-

15.8

-

mV/K

MMBZ27VCL

MMBZ27VCL/DG

-

23

-

mV/K

MMBZ33VCL

MMBZ33VCL/DG

-

29.4

-

mV/K

Table 10.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

MMBZ27VCL: unidirectional and bidirectional

Fig 3.

Rated peak pulse power as a function of

exponential pulse duration (rectangular

waveform); typical values

Fig 4.

Relative variation of rated peak pulse power as

a function of junction temperature; typical

values

006aab327

10

(W)

1

10

1

0

200

150

50

100

006aab321

0.4

0.8

1.2

0