TSM108 datasheet(3/13 Pages) STMICROELECTRONICS

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TSM108

3/13

ELECTRICAL CHARACTERISTICS

amb = 25°C, VCC = 12V (unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

CURRENT CONSUMPTION

ICC

Current Consumption

STANDBY

Istby

Current Consumption in Standby Mode

150

µA

Vsh

Input Standby Voltage High Impedance

Internal Pull up resistor.

Stby pin should be left

open

Vsl

Input Standby Voltage Low

0.8

OSCILLATOR

FOSC

Frequency of the Oscillator

COSC = 220pF

100

130

kHz

VOLTAGE CONTROL 1) 2)

1. Vref parameter indicates global precision of the voltage control loop.

2. Control Gain : Av = 95dB ; Input Resistance : Rin = infinite ; Output Resistance : Rout = 700MΩ ; Output Source/Sink Current :

Iso, Isi = 150µA ; Recommended values for the compensation network are : 22nF & 22kΩ in series between output and ground.

Vref

Voltage Control Reference

Tamb = 25°C

-25°C < Tamb < 85°C

2.450

2.520

2.590

CURRENT CONTROL 3) 4) 5)

3. Vsense parameter indicated global precision of the current control loop.

4. Control Gain : Av = 105dB ; Input Resistance : Rin =380kΩ ; Output Resistance : Rout = 105MΩ ; Output Source/Sink Current :

Iso, Isi = 150µA ; Recommended values for the compensation network are : 22nF & 22kΩ in series between output and ground.

5. A current foldback function is implemented thanks to a systematic -6mV negative offset on the current amplifier inputs which

protects the battery from over charging current under low battery voltage conditions, or output short circuit conditions.

Vsense

Current Control Reference Voltage

Tamb = 25°C

-25°C < Tamb < 85°C

196

191

206

216

221

GATE DRIVE - P CHANNEL MOSFET DRIVE

Isink

Sink Current - Switch ON

Tamb = 25°C

-25°C < Tamb < 85°C

Isource

Source Current - Switch OFF

Tamb = 25°C

-25°C < Tamb < 85°C

Cload

Input Capacitance of the PMOSFET 6)

6. The Gate Drive output stage has been optimized for PMosfets with input capacitance equal to Cload. A bigger Mosfet (with input

capacitance higher than Cload) can be used with TSM108, but the gate drive performances will be reduced (in particular when

reaching the Dmax. PWM mode).

11.5

PWM

∆

max.

Maximum Duty Cycle of the PWM function

100

UVLO

Under Voltage Lock Out 7)

7. The given limits comprise the hysteresis (UVhyst).

-25°C < Tamb < 85°C

UVhyst

UVLO Voltage Hysteresis - low to high

200

Ruvu

Upper Resistor of UVLO bridge 8)

8. It is possible to modify the UVLO and OVLO limits by adding a resistor (to ground or to VCC) on the pins UV and OV.

The internal values of the resistor should be taken into account

Tamb = 25°C

184

Ω

Ruvl

Lower Resistor of UVLO bridge (see note 8)

Tamb = 25°C

76.5

Ω

OVLO

Over Voltage Lock Out (see note 7)

-25°C < Tamb < 85°C

OVhyst

OVLO Voltage Hysteresis - low to high

400

Rovu

Upper Resistor of OVLO bridge (see note 8)

Tamb = 25°C

275

Ω

Rovl

Lower Resistor of OVLO bridge (see note 8)

Tamb = 25°C

23.2

Ω

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