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MSP430F2003TPWR 数据表(PDF) 49 Page - Texas Instruments

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部件名 MSP430F2003TPWR
功能描述  MIXED SIGNAL MICROCONTROLLER
PDF  88 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

MSP430F2003TPWR 数据表(HTML) 49 Page - Texas Instruments

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MSP430x20x1, MSP430x20x2, MSP430x20x3
MIXED SIGNAL MICROCONTROLLER
SLAS491D -- AUGUST 2005 -- REVISED SEPTEMBER 2007
49
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
Flash Memory
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and Erase supply voltage
2.2
3.6
V
fFTG
Flash Timing Generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time (see Note 1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ =25°C
100
years
tWord
Word or byte program time
30
tBlock, 0
Block program time for 1st byte or word
25
tBlock, 1-63
Block program time for each additional byte or word
see Note 2
18
t
tBlock, End
Block program end-sequence wait time
seeNote2
6
tFTG
tMass Erase
Mass erase time
10593
tSeg Erase
Segment erase time
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller’s state machine (tFTG =1/fFTG).
RAM
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(RAMh)
RAM retention supply voltage (see Note 1)
CPU halted
1.6
V
NOTE 1: This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.



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