PRODUCT SELECTION GUIDE

PARAMETER

27C010L-90

27C010L-12

27C010L-15

27C010L-17

27C010L-20

Address Access Time (Max)

90 ns

120 ns

150 ns

170 ns

200 ns

Chip Select Time (Max)

90 ns

120 ns

150 ns

170 ns

200 ns

Output Enable Time (Max)

35 ns

35 ns

40 ns

40 ns

40 ns

WS27C010L

TOP VIEW

Chip Carrier

CERDIP

PIN CONFIGURATION

4-25

Military 128K x 8 CMOS EPROM

KEY FEATURES

— 90 ns Access Time

27C010 EPROMs

— Latch-Up Immunity to 200 mA

— 32 Pin CERDIP Package

— ESD Protection Exceeds 2000 Volts

— 32 Pin Leadless Chip Carrier (CLLCC)

GENERAL DESCRIPTION

The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory

organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to

operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned

split gate EPROM cell, resulting in a low power device with a very cost effective die size.

The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and

microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the

potential of no-wait state operation. And where this parameter is important, the WS27C010L provides the user with

The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier

(CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade

density paths for existing 128K and 256K EPROM users.

OE

CE

1

43

2

32 31 30

29

28

27

26

25

24

23

22

21

5

6

7

8

9

10

11

12

13

14 15 16 17 18 19 20

PGM

NC

A14

A13

A8

A9

A11

OE

A10

CE

GND

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

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