WS27C256L-12 datasheet(4/5 Pages) STMICROELECTRONICS

4 / 5 page

PROGRAMMING INFORMATION

DC CHARACTERISTICS (T

A = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V. See Notes 8, 9 and 10)

SYMBOLS

PARAMETER

MIN

MAX

UNITS

ILI

Input Leakage Current (VIN = VCC or Gnd)

–10

µA

IPP

VPP Supply Current During

Programming Pulse (CE/PGM = VIL)

ICC

VCC Supply Current

VIL

Input Low Voltage

–0.1

0.8

VIH

Input High Voltage

2.0

VCC + 0.3

VOL

Output Low Voltage During Verify (IOL = 2.1 mA)

0.4

VOH

Output High Voltage During Verify (IOH = –400 µA)

3.5

SYMBOLS

PARAMETER

MIN

TYP

MAX

UNITS

tAS

Address Setup Time

µs

tCOH

CE High to OE High

µs

tOES

Output Enable Setup Time

µs

tOS

Data Setup Time

µs

tAH

Address Hold Time

µs

tOH

Data Hold Time

µs

tDF

Chip Disable to Output Float Delay

tOE

Data Valid From Output Enable

tVS

VPP Setup Time

µs

tPW

PGM Pulse Width

500

1000

µs

tOCX

OE Low to CE "Don't Care"

µs

WS27C256L

4-22

NOTES: 8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.

9. VPP must not be greater than 14 volts including overshoot. During CE/PGM = VIL, VPP must not be switched from 5 volts

to 12.5 volts or vice-versa.

10. During power up the CE/PGM pin must be brought high (

≥ V

IH) either coincident with or before power is applied to VPP.

AC CHARACTERISTICS (T

A = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V)

PROGRAMMING WAVEFORM

ADDRESS STABLE

ADDRESSES

VPP

VCC

CE/PGM

DATA

tAS

tPW

tOS

tOH

tOE

tAH

tDF

tVS

tCES

tOES

tOCX

tCOH

DATA OUT

DATA IN STABLE

VIH

VIL

VIH

VIL

VALID

HIGH Z

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