7-24

LP0701

Package

I

D

(continuous)*

I

D

(pulsed)*

Power Dissipation

θ

jc

θ

ja

I

DR

I

DRM

*

@ T

TO-92

-0.5A

-1.25A

1W

125

170

-0.5A

-1.25A

SO-8

-0.7A

-1.25A

83

-0.7A

-1.25A

*I

†

Mounted on FR4 board, 25mm x 25mm x 1.57mm.

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

Drain-to-Source Breakdown Voltage

-16.5

V

V

V

GS(th)

Gate Threshold Voltage

-0.5

-0.7

-1.0

V

V

∆V

GS(th)

Change in V

-4.0

mV/

°CV

I

GSS

Gate Body Leakage

-100

nA

V

I

DSS

Zero Gate Voltage Drain Current

-100

nA

V

-1.0

mA

V

V

-0.4

V

I

D(ON)

ON-State Drain Current

-0.6

-1.0

V

-1.25

-2.3

A

V

2.0

4.0

V

R

DS(ON)

1.7

2.0

V

1.3

1.5

V

∆R

DS(ON)

Change in R

0.75

%/

°CV

G

FS

Forward Transconductance

500

700

m

V

C

ISS

Input Capacitance

120

250

C

OSS

Common Source Output Capacitance

100

125

pF

V

C

RSS

Reverse Transfer Capacitance

40

60

t

d(ON)

Turn-ON Delay Time

20

t

r

Rise Time

20

V

t

d(OFF)

Turn-OFF Delay Time

30

R

t

f

Fall Time

30

V

SD

Diode Forward Voltage Drop

-1.2

-1.5

V

V

Note 1:

All D.C. parameters 100% tested at 25

°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

Note 2:

All A.C. parameters sample tested.

Ω

A

Static Drain-to-Source

ON-State Resistance

ns

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V