1

TC2320

04/23/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

TC2320

N- and P- Channel Enhancement-Mode Dual MOSFET

Features

❑ Low threshold

❑ Low on resistance

❑ Independent, electrically isolated N- and P-channels

❑ Low input capacitance

❑ Fast switching speeds

❑ Free from secondary breakdowns

❑ Low input and output leakage

Application

❑ Medical Ultrasound Transmitters

❑ High voltage pulsers

❑ Amplifiers

❑ Buffers

❑ Piezoelectric transducer drivers

❑ General purpose line drivers

❑ Logic level interfaces

Low Threshold DMOS Technology

The Supertex TC2320TG consist of a high voltage low threshold N-

channel and P-channel MOSFET in an SO-8 package. These low

threshold enhancement-mode (normally-off) transistors utilize an

advanced vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Absolute Maximum Ratings*

Drain-to-Source Voltage

BV

DSS

Drain-to-Gate Voltage

BV

DGS

Gate-to-Source Voltage

±20V

Operating and Storage Temperature

-55°C to +150°C

Soldering Temperature*

300°C

*Distance of 1.6mm from case for 10 seconds.

V

B

S

S

D

V

B

/

S

G

D

R

)

N

O

(

S

D

)

x

a

m

(e

g

a

k

c

a

P

/

r

e

b

m

u

N

r

e

d

r

O

l

e

n

n

a

h

C

-

Nl

e

n

n

a

h

C

-

Pl

e

n

n

a

h

C

-

Nl

e

n

n

a

h

C

-

P8

-

O

S

V

0

0

2V

0

0

2

-0

.

72

1G

T

0

2

3

2

C

T

Package Option

S1

G1

S2

G2

D2

D2

D1

D1

SO-8 Package

(top view)

N-Channel

P-Channel

1

2

3

4

6

5

7

8