2

TC2320

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

Drain-to-Source Breakdown Voltage

200

V

V

GS(th)

Gate Threshold Voltage

0.6

2.0

V

V

Change in V

-4.5

Gate Body Leakage

100

nA

I

DSS

Zero Gate Voltage Drain Current

1.0

10.0

1.0

mA

V

T

ON-State Drain Current

0.6

A

1.2

V

Static Drain-to-Source

8.0

Ω

ON-State Resistance

7.0

Ω

V

1.0

G

FS

Forward Transconductance

150

m

V

C

ISS

Input Capacitance

110

C

OSS

Common Source Output Capacitance

60

pF

V

Reverse Transfer Capacitance

23

t

d(ON)

Turn-ON Delay Time

20

Rise Time

15

t

d(OFF)

Turn-OFF Delay Time

25

t

f

Fall Time

25

Diode Forward Voltage Drop

1.8

V

Reverse Recovery Time

300

ns

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

V

ns

I

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

Switching Waveforms and Test Circuit