LTC3545 datasheet(3/20 Pages) LINER

3 / 20 page

LTC3545/LTC3545-1

35451fb

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTC3545E/LTC3545E-1 are guaranteed to meet performance

speciﬁcations from 0°C to 85°C. Speciﬁcations over the –40°C to

125°C operating junction temperature range are assured by design,

characterization and correlation with statistical process controls. The

LTC3545I/LTC3545I-1 are guaranteed to meet performance speciﬁcations

over the full –40°C to 125°C operating junction temperature range.

Note 3: TJ is calculated from the ambient temperature TA and power

dissipation PD according to the following formula:

TJ = TA + (PD)(68°C/W)

This IC includes overtemperature protection that is intended to protect

the device during momentary overload conditions. Junction temperature

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

VLOADREG

Output Voltage Load Regulation (Notes 5, 6)

0.5

IFBx

Feedback Pin Leakage (Note 5)

Input DC Bias Current (All Regulators Enabled)

Pulse Skip (Active Mode)

Burst Mode Operation (All Regulators Sleeping)

Shutdown (RUNX = 0V)

ILOAD = 0A, 2.25MHz

VFBx = 0.5V

VFBx = 0.7V

680

0.1

750

2.0

μA

fOSC

Oscillator Frequency

●

1.8

2.25

2.7

MHz

fSYNC

Synchronization Frequency

LTC3545 Only

●

MHz

VRUN(HIGH)

RUNx Input High Voltage

●

VRUN(LOW)

RUNx Input Low Voltage

●

0.3

IRUNx

RUN Leakage Current

±0.1

±1

μA

ILSWx

SWx Leakage

VRUNx = 0V, VSWx = 0V or 5.5V, VIN = 5.5V

±0.1

±1

μA

ISYNC

SYNC Leakage

VRUN = 0V, VSYNC = 0V or 5.5V,

VIN = 5.5V

±0.1

±1

μA

TPGOODx

Power Good Threshold–Deviation From VFB

Steady State (0.6V)

VFBx Ramping Up

VFBx Ramping Down

–7.5

–10

RPGOODx

Power Good Pull-Down On-Resistance

IPGD = 50mA

●

MODE/SYNC Thresholds

0.93

Individual Regulator Characteristics (One Regulator Enabled)

tSS

Soft-Start Period

VFBx = 10% to 90% Fullscale

850

1100

μs

IPK

Peak Switch Current Limit

1.3

1.6

Input DC Bias Current

Pulse Skip (Active Mode)

Burst Mode Operation (Sleeping)

ILOAD = 0A, 2.25MHz

VFBx = 0.5V

VFBx = 0.7V

310

μA

RPFET

RDS(ON) of P-Channel FET (Note 7)

ISWx = 100mA

0.35

RNFET

RDS(ON) of N-Channel FET (Note 7)

ISWx = –100mA

0.35

VUVLO

Undervoltage Lockout

(High VCC to Low)

●

1.8

2.25

ELECTRICAL CHARACTERISTICS The ● denotes the speciﬁcations which apply over the full operating

temperature range, otherwise speciﬁcations are at TA = 25°C. VIN = PVIN = 3.6V unless otherwise noted. (Note 3)

will exceed 125°C when overtemperature is active. Continuous operation

above the speciﬁed maximum operating junction temperature may impair

device reliability.

Note 4: This IC includes overtemperature protection that is intended

to protect the device during momentary overload conditions. Junction

temperature will exceed 125°C when overtemperature is active.

Continuous operation above the speciﬁed maximum operating junction

temperature may impair device reliability.

Note 5: The LTC3545/LTC3545-1 are tested in a proprietary test mode that

connects VFB to the output of the error ampliﬁer.

Note 6: Load regulation is inferred by measuring the regulation loop gain.

Note 7: The QFN switch-on resistance is guaranteed by correlation to

water level measurements.

Note 8: Guaranteed by long-term current density limitations.

LTC3545 数据表(PDF) 3 Page - Linear Technology

LTC3545 数据表(HTML) 3 Page - Linear Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

数据表下载

链接网址

LTC3545 数据表(PDF) 3 Page - Linear Technology

LTC3545 数据表(HTML) 3 Page - Linear Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

数据表 下载

链接网址

数据表下载